METHOD FOR FORMING LOW RESISTIVE CONTACT USING POROUS OXIDE PLUG AND METHOD FOR FORIMING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for forming a contact is provided to prevent a doping element from being diffused from an active region of a semiconductor substrate, by protecting the active region in the course of forming a contact between the active region and an interconnection while using a porous oxide layer plug. CONSTITUTION: The first interlayer dielectric(210) which is dense and hard is formed on the semiconductor substrate(200). The first interlayer dielectric is etched to form the first contact hole opening the active region(202) of the semiconductor substrate. A porous oxide layer having high etch selectivity to the first interlayer dielectric is filled in the first contact hole to form the porous oxide layer plug. The second interlayer dielectric(220) which is dense and hard is formed on the semiconductor substrate having the porous oxide layer plug. The second interlayer dielectric is etched to form the second contact hole(222) exposing the upper portion of the buried first contact hole. The porous oxide layer filled in the first contact hole is eliminated. A conductive material is filled in the first and second contact holes to form a contact plug.