| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which a memory cell size of an SRAM can be easily reduced without remarkably increasing the number of steps, and to improve the soft error resistance of the SRAM due to alpha rays. SOLUTION: In a semiconductor memory having the SRAM where a memory cell is constituted of a flip flop circuit, which comprises a pair of drive transistors and a pair of load transistors, and a pair of transfer transistors, each gate electrode of the drive transistors, the load transistors and the transfer transistors is constituted by using a first conductive film wiring formed by using a first conductive film provided on a semiconductor substrate, and one side of a pair of local wirings which are cross-coupled between a pair of input- output terminals of the flip flop circuit is constituted by using an embedding groove wiring which includes the gate electrodes and is formed in a first insulating film provided on the semiconductor substrate, and the other of the pair of local wirings is constituted of a second conductive film wiring formed by using a second conductive film provided via the second insulating film on the first insulating film including the embedding groove wiring. |
