| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a p-type semiconductor crystal, which has high activation factor in a wide-gap semiconductor. SOLUTION: In the method of manufacturing a p-type semiconductor crystal by subjecting the semiconductor crystal to donor acceptor simultaneous doping, the semiconductor crystal (for example, ZnO) is supplied intermittently with donor impurities (for example, Ga), in the manufacturing process of the p-type semiconductor crystal. |
