METHOD FOR PRODUCING GaN-BASED SEMICONDUCTOR CRYSTAL AND GaN-BASED SEMICONDUCTOR BASIC MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high quality GaN-based crystal, and a GaN-based semiconductor basic material in which a high quality GaN- based crystal can be grown by that method. SOLUTION: Protrusions and recesses (or a level difference) 1a are formed on the surface of a crystal substrate 1 composed of a material different from a GaN-based semiconductor and a GaN-based crystal 2 is grown directly on the surface where protrusions and recesses are formed with no intermediary of a low temperature GaN-based buffer layer thus obtaining a GaN-based crystal layer 3. Lateral growth of the GaN-based crystal is suppressed by the protrusions and recesses (or a level difference) on the surface of the crystal substrate and the surface is planarized with no intermediary of the buffer layer.