发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem that burr occurs on a cut face in a batch-forming semiconductor device manufacturing method wherein semiconductor devices are cut and divided by using blades. SOLUTION: The end of the bottom face of the electrode lead 20 of the QFN type semiconductor device has a taper part 16 in a cross section direction, a burr part 27 is left on the taper part 16 in manufacturing process, positioned on the area of the taper part 16, and since the height does not exceed the bottom face of the lead, influence due to burr when the semiconductor device is secondarily mounted on a mounting substrate can be dissolved.</p>
申请公布号 JP2002289756(A) 申请公布日期 2002.10.04
申请号 JP20010087010 申请日期 2001.03.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJIMOTO HIROAKI;NOMURA TORU
分类号 H01L23/12;H01L21/56;H01L23/50;(IPC1-7):H01L23/50 主分类号 H01L23/12
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