| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a perpendicular resonator type surface emitting semiconductor laser, capable of reducing the change of a threshold current in the case of changing an environmental temperature. SOLUTION: The method for manufacturing the perpendicular resonator type surface emitting semiconductor laser having a resonator having an active layer made of a III-V mixed crystal semiconductor containing N and As, and multilayer film reflecting mirrors respectively provided on and underneath the resonator comprises the step of initializing so that the gain peak wavelengthλa (0) at the ambient temperature in the active layer immediately after the growth satisfies formula:λa (0)=λc +Δλh -ΔλT, whereinλc is the resonance wavelength of the resonator,λa is a gain peak wavelength of the active layer,ΔλT is the shifting amount of the gain peak wavelengthλa due to the rise of the environmental temperature.
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