发明名称 |
PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND SEMICONDUCTOR SUBSTRATES |
摘要 |
PURPOSE: A process for producing semiconductor substrates and semiconductor substrates are provided to achieve an excellent chemical resistance with a high yield and an excellent production reliability without any development of cracks and any generation of foreign matters due to a projected portion of the coating film. CONSTITUTION: A coating film by coating an insulating film-forming coating liquid is formed on a substrate mounted on a rotating disc of a spin coater according to a spin coating method. A projected portion of the coating film formed at the periphery of the substrate is removed by ejecting a solvent through a nozzle moving from any point on a line drawn between the periphery edge and the center of the substrate toward the periphery edge while rotating the substrate.
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申请公布号 |
KR20020075355(A) |
申请公布日期 |
2002.10.04 |
申请号 |
KR20020055256 |
申请日期 |
2002.09.12 |
申请人 |
CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. |
发明人 |
EGAMI MIKI;MURAGUCHI RYO |
分类号 |
H01L21/768;C23C18/12;H01L21/00;H01L21/306;H01L21/31;H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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