| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase voltage gain, without limiting the operating temperature of a single-electron transistor logic circuit to a low-temperature range, and to realize a simply constituted multilevel storage circuit. SOLUTION: The source electrode of a field-effect transistor 21 is connected with a drain electrode D of a single-electron transistor 1, and voltage Vds between source and drain of the single-electron transistor 1 is thereby kept at as low a value as can maintain Coulomb blockaded state, regardless of the voltage Vout of an output terminal 9. Negative feedback action from the output terminal 9 on the potential of a single-electron island 5 is suppressed, and a large voltage gain is thereby acquired. An input terminal 8 and the output terminal 9 are short-circuited to form a storage node, and a multilevel storage circuit is thereby realized.</p> |
