| 摘要 |
PROBLEM TO BE SOLVED: To improve the productivity of a semiconductor dynamical quantity sensor by preventing etchants from permeating the circumferences of grooves and breaking the grooves in etching steps respectively performed for forming a fixed section and mobile sections at the time of manufacturing the sensor. SOLUTION: Since fixed electrodes 14-17 and a mobile electrode 13 are formed of a silicon material, the electrodes 14-17 and 13 are formed at once from a silicon wafer. In the first etching step, grooves for making the electrodes 14-17 and 13 independent and grooves for preventing the grooves from becoming communicative with their circumferences are formed. In the second etching step, the etchants are prevented from permeating adjacent semiconductor dynamical quantity sensors by partitioning the sensors by the circumferential sections. |
