| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can decrease a misalignment amount without being adversely influenced by asymmetry of an underlayer film even after an etching process. SOLUTION: A method for manufacturing a semiconductor device comprises a first step of transferring a mask pattern 10 to a semiconductor substrate as a resist pattern 5; and a second step of etching with the resist pattern 5 as a mask. Alignment marks 3, 7 are used for determining a position where a pattern 8 and the mask pattern 10 which have been already formed on the substrate in the first step are overlapped each other, and a misalignment amount in the second step has been corrected in advance in the first step, based on results in a lot which was processed as the second step in the past. |
