| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine COP structure without causing oxidation of a plug. SOLUTION: This semiconductor device is provided with a semiconductor substrate 1, an interlayer insulating film 7 having a contact hole reaching a source drain layer 2 formed on the semiconductor substrate 1, the plug 10 which is formed in the contact hole and whose main component is Ru, and a capacitor which is formed on the interlayer insulating film 7 and electrically connected to the plug 10. The capacitor has constitution, containing a lower capacitor electrode 11 whose main component is SrRuO3 and which is directly connected with the plug 10, and a ferroelectric substance film 12 and an upper capacitor electrode 13 which are formed on the lower capacitor electrode 11.
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