| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be increased in operating speed, while maintaining a high breakdown voltage and a low on-resistance. SOLUTION: This semiconductor device has an SOI structure, in which a semiconductor layer 3 is formed on a semiconductor supporting substrate 1 via an insulation layer 2. In the p-type well region 5 of this device, a gate electrode 9 is formed on the potion interposed between an n-type source region 6 and an n-type drain region 4 via a gate insulating film 8. In the semiconductor layer 3, n-type semiconductor regions 3a and SiO2 insulating regions 14 respectively heading the n-type drain region 4 from the p-type well region 5 are formed alternately in the gate width direction in the portions interposed between the regions 5 and 4. In the insulation regions 14, embedded electrodes 15 heading the drain region 4 from the well region 5 are embedded in the intermediate sections in the gate width direction. The embedded electrodes 15 are electrically connected to source electrodes 11 via wiring 17. |
