| 摘要 |
PROBLEM TO BE SOLVED: To precisely control the light distribution of a high output DBR laser. SOLUTION: On an n-type GaAs substrate 1, there are installed an n-type GaAs barrier layer 2, an n-type Ga0.5 Al0.5 As first clad layer 3, an active layer 4 which is the multiple quantum well of a Ga0.7 Al0.3 As barrier layer and a GaAs well layer, a p-type Ga0.5 Al0.5 As second clad layer 5, a p-type Ga0.7 Al0.3 As first light guide layer 6, a p type Ga0.8 Al0.2 As diffraction grating layer 7 provided with a partially noncontinuous window region 7a on the first light guide layer having distribution Bragg reflection effect to guided light, a p-type Ga0.5 Al0.5 As second light guide layer 8 on the window region 7a and the diffraction grating layer 7 and a p-type Ga0.8 Al0.2 As third clad layer 9. |
