THIN FILM CRYSTALLINE WAFER HAVING pn JUNCTION AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To set an energy discrete value of a junction interface over a relatively wide range in an Inx Aly Ga1-x-y P/GaAs heterojunction. SOLUTION: An Inx Aly Ga1-x-y P layer 7 having a different composition from an n-type Inx Aly Ga1-x-y P layer 8 is provided as a control layer at the interface of a heterojunction between a p-type GaAs layer 6 and an n-type Inx Aly Ga1-x-y P layer 8, whose lattice is matched, and an energy band gap value at the heterojunction is changed so that a value of current amplificationβor offset voltage Vbe can be brought into a value according to a specification.