| 摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection element structure capable of providing sufficient ESD protection capability and not interfering densification. SOLUTION: An ESD protection diode is constructed by forming an n+ buried diffusion layer 8 on an N type silicon substrate and also forming an epitaxial layer 9 thereon. Further, for example, a deep n+ diffusion layer 10 reaching the n+ buried diffusion layer 8 may be formed in a power line. In such ESD protection diode as above configuration, it is possible to make a surge current to vertically flow (in the depth direction) and to obtain the sufficient ESD protection capability without increasing an area of the ESD protection element.
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