| 摘要 |
PROBLEM TO BE SOLVED: To provide a DTMISFET which simplifies manufacturing process. SOLUTION: A semiconductor device is provided with a silicon substrate 100; an insulation film 101 formed at a part on the silicon substrate 100, turned into a gate insulation film in a channel region and provided with a contact hole 106, exposing the surface of a semiconductor substrate at a part of the area other than the channel area; a metal electrode 102 formed on the insulation film 101, turned into gate electrode on the gate insulation film, directly connected to the silicon substrate 100 in the contact hole and constituted of a metal material; and a source 103 and a drain 104 formed on the semiconductor substrate, so as to clamp the channel region.
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