| 摘要 |
PROBLEM TO BE SOLVED: To suppress the fluctuation of pattern dimensions in etching of a reflection preventive film. SOLUTION: The reflection preventive film 15 in the opening 17 of resist is etched off by the etching gas containing the halogen substitution product of hydrocarbon. Consequently, the carbon components of the halogen substitution product of the hydrocarbon are made as a carbonic deposit 18, at the sidewall of the opening 17 of resist 16 low in ion irradiation and the sidewall of the opening where the reflection preventive film is etched at the time of etching of the reflection preventive film 15, and it works as a sidewall protective film, so it can anisotropically etch the reflection preventive film 15 by suppressing the sideway spread of the opening 17 of the resist 16 and the opening of the reflection preventive film 15 by etching. |
