发明名称 WIRING STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A wiring structure of a semiconductor device is provided to increase capacitance and inductor components of a data line, a ground line, and a power line by lengthening each length of the data line, the ground line, and the power line and increasing a contact area between the lines. CONSTITUTION: A wiring structure of a semiconductor device is formed with a data line(30), a ground line(20), and a power line(10). The data line(30) of an uneven shape is arranged crookedly. The ground line(20) is crookedly arranged in a predetermined interval along the data line(30) on an upper portion of the data line(30). The power line(10) is crookedly arranged in a predetermined interval along the data line(30) on a lower portion of the data line(30).
申请公布号 KR20020074573(A) 申请公布日期 2002.10.04
申请号 KR20010014412 申请日期 2001.03.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, GYEONG JUN;LEE, HYEON U
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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