发明名称 SEMICONDUCTOR DEVICE TAPE CARRIER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent excess melting of copper of a lead wire in a lower part of a solder resist and suppress the whisker of tin plating in a semiconductor device tape carrier. SOLUTION: The solder resist 6 is applied in a position except its terminal portion on a copper foil wiring pattern 3 which is formed on a dielectric film 1 via an adhesive layer 2, thereafter, a thin tin-plated layer of 0.01 to 0.2 μm in thickness is formed on the terminal portion as first tin plating treatment, and a pure tin layer 4a and a tin-copper alloy layer 5a of 0.20 μm or less are formed by heat treatment. Then, a pure tin plating layer of 0.15 to 0.80 μm in thickness is formed on the terminal portion as a second tin plating treatment, and a pure tin layer 4b of 0.15 to 0.80 μm in thickness and a tin-copper alloy layer 5b of 0.20 μm or more in thickness are formed by heat treatment.
申请公布号 JP2002289652(A) 申请公布日期 2002.10.04
申请号 JP20010086912 申请日期 2001.03.26
申请人 HITACHI CABLE LTD 发明人 AKINO HISANORI;MIZUNO MASAHIRO;SUGANO MASARU
分类号 C23C18/31;C23C10/28;H01L21/60;H05K3/24 主分类号 C23C18/31
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