MANUFACTURING METHOD FOR GATE ELECTRODE

摘要

PROBLEM TO BE SOLVED: To manufacture a gate provided with many threshold voltages without special implantation. SOLUTION: The manufacturing method of a gate electrode 30 comprises the steps of a semiconductor substrate 10 having an overlying patterned layer 18 exposes a portion of the substrate 10 within an active region and the opening part of the patterned layer 18. The patterned layer 18 is provided with exposed sidewalls. Internal spacers 24 are formed over a portion of the exposed substrate portion within the opening part of the patterned layer 18 on the exposed sidewalls of the patterned layer 18. The internal spacers 24 are comprised of a work function material (WF1: refer to table 1), having a first work function. A planarized gate electrode body 28 is formed within the remaining portion of the opening of the patterned layer 18 and adjacent to the internal spacers 24. The gate electrode body 28 is comprised of a second work function material (WF2: refer to table 1), having a second work function. The internal spacers 24 and the gate electrode body 28 form the gate electrode 30.