发明名称 Method for manufacturing infrared ray sensor
摘要 In an infrared ray sensor for a bolometer, a bridge structure body, a resistive element film for the bolometer, and a protection film is formed via a space on a substrate, and is formed into a solution form by dissolving metal organic compound into solvent. The solution is applied and dried. A laser ray is irradiated for the solution with wavelength of 400 nm or less. A bond between carbon and oxygen is decomposed and cut to thereby form an oxide thin-film.
申请公布号 US2002139784(A1) 申请公布日期 2002.10.03
申请号 US20010984853 申请日期 2001.10.31
申请人 NEC CORPORATION 发明人 TSUCHIYA TETSUO;MIZUTA SUSUMU;KUMAGAI TOSHIYA;YOSHITAKE TSUTOMU;SHIMAKAWA YUICHI;KUBO YOSHIMI
分类号 G01J1/02;C23C26/02;G01J5/20;H01L37/00;(IPC1-7):B23K26/38 主分类号 G01J1/02
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