| 摘要 |
A FeRAM device includes a first memory cell and a second memory cell sharing a cell plate, in which the first memory cell and the second memory cell are commonly coupled to a bit line. The first memory cell is driven by a first word line and the second memory cell is driven by a second word line. The first memory cell includes a ferroelectric capacitor having a first electrode connected to the cell plate, a second electrode, and a ferroelectric layer disposed between the first electrode and the second electrode; a first transistor having a gate electrode connected to the first word line, a source and a drain, wherein the source and the drain of the first transistor are respectively connected to the bit line and the second electrode of the ferroelectric capacitor; and a second transistor having a gate electrode connected to the second word line, a source and a drain, wherein the source and the drain of the second transistor are respectively connected to the second electrode of the ferroelectric capacitor and the cell plate.
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