发明名称 |
DECOUPLING CAPACITORS FOR THIN GATE OXIDES |
摘要 |
In some embodiments, the invention involves a die having a first conductor carrying a power supply voltage and a second conductor carrying a ground voltage. A semiconductor capacitor operating in depletion mode is coupled between the first and second conductors to provide decoupling capacitance between the first and second conductors, the semiconductor capacitor having a gate voltage. Various configurations may be used including: n+ gate poly and n+ source/drain regions in an n-body; p+ gate poly and n+ source/drain regions in an n-body; p+ gate poly and p+ source/drain regions in an n-body; p+ gate poly and p+ source/drain regions in a p-body; n+ gate poly and p+ source/drain regions in a p-body; n+ gate poly and n+ source/drain regions in a p-body. The power supply voltage may have a larger absolute value than does a flatband voltage.
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申请公布号 |
US2002140109(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US19990469406 |
申请日期 |
1999.12.22 |
申请人 |
KESHAVARZI ALI;DE VIVEK K.;KARNIK TANAY;NAIR RAJENDRAN |
发明人 |
KESHAVARZI ALI;DE VIVEK K.;KARNIK TANAY;NAIR RAJENDRAN |
分类号 |
H01L27/04;H01L21/822;H01L27/08;H01L29/94;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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