发明名称 DECOUPLING CAPACITORS FOR THIN GATE OXIDES
摘要 In some embodiments, the invention involves a die having a first conductor carrying a power supply voltage and a second conductor carrying a ground voltage. A semiconductor capacitor operating in depletion mode is coupled between the first and second conductors to provide decoupling capacitance between the first and second conductors, the semiconductor capacitor having a gate voltage. Various configurations may be used including: n+ gate poly and n+ source/drain regions in an n-body; p+ gate poly and n+ source/drain regions in an n-body; p+ gate poly and p+ source/drain regions in an n-body; p+ gate poly and p+ source/drain regions in a p-body; n+ gate poly and p+ source/drain regions in a p-body; n+ gate poly and n+ source/drain regions in a p-body. The power supply voltage may have a larger absolute value than does a flatband voltage.
申请公布号 US2002140109(A1) 申请公布日期 2002.10.03
申请号 US19990469406 申请日期 1999.12.22
申请人 KESHAVARZI ALI;DE VIVEK K.;KARNIK TANAY;NAIR RAJENDRAN 发明人 KESHAVARZI ALI;DE VIVEK K.;KARNIK TANAY;NAIR RAJENDRAN
分类号 H01L27/04;H01L21/822;H01L27/08;H01L29/94;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L27/04
代理机构 代理人
主权项
地址