Semiconductor manufacturing apparatus

摘要

A semiconductor manufacturing apparatus can sufficiently increase a nitrogen concentration in a nitride compound thin film, and make a low temperature nitrify treatment possible. The apparatus comprises a vacuum vessel 21 wherein a nitride film is formed by a plasma treatment. A nitrify raw material gas is introduced into the vessel from a gas supply opening 26 through a gas introduction system 41. The vessel is exhausted from an exhaustion opening 34 and a pressure in the vessel is controlled by a vacuum exhaustion system 42. A magnetic force line generator 31 and a tube-shaped discharge electrode 29 which is connected to a high-frequency electric power application system 43 are provided along an outer periphery of the vessel so that the gas is allowed to discharge by an electric field and magnetic force lines H thereby forming a high-density plasma within a plasma treatment region 20. In an interior of the vessel, there is provided a susceptor 33 on which a substrate W to be treated. The susceptor is provided with a ceramic heater for heating the substrate. The heater is controlled by a heat controller so that a temperature of the substrate is controlled to be 400° C. or lower.