发明名称 |
PHASE SHIFTING MASK FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE MASK |
摘要 |
PROBLEM TO BE SOLVED: To provide a phase shifting mask for manufacturing a semiconductor device and to provide a method for manufacturing the mask. SOLUTION: The phase shifting mask comprises a transparent substrate 100, a main pattern 130a composed of a first phase shifting layer 110a formed on the transparent substrate 100 and having first optical transmittance greater than 0, and at least one assistant pattern 140 which is formed around the main pattern 130a on the transparent substrate for phase-shifting by the same degree as the main pattern 130a but is not transferred to a wafer during exposure, and which is less than the first optical transmittance. |
申请公布号 |
JP2002287326(A) |
申请公布日期 |
2002.10.03 |
申请号 |
JP20020000863 |
申请日期 |
2002.01.07 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIN JINSEI;RI JUGEN;JUNG SUNG-GON |
分类号 |
G03F1/00;G03F1/29;G03F1/32;G03F1/36;G03F1/54;G03F1/68;G03F1/70;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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