发明名称 |
PHASE SHIFTING MASK BLANK, PHASE SHIFTING MASK AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shifting mask blank provided with at least one phase shifting layer on a transparent substrate, in which the phase shifting layer comprises at least a metal and germanium. SOLUTION: The high quality phase shifting mask blank and the phase shifting mask the film thickness of which necessary to change the phase difference by 180 deg. can be decreased are obtained by forming the phase shifting layer comprising at least a metal such as molybdenum, and germanium.</p> |
申请公布号 |
JP2002287323(A) |
申请公布日期 |
2002.10.03 |
申请号 |
JP20010084919 |
申请日期 |
2001.03.23 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
KANEKO HIDEO;INAZUKI SADAOMI;TSUKAMOTO TETSUSHI;OKAZAKI SATOSHI |
分类号 |
G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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