发明名称 Surface emission type semiconductor light-emitting device and method of manufacturing the same
摘要 A method of manufacturing a semiconductor light-emitting device includes: a step of forming a stacked semiconductor layer having a plurality of columnar portions over a semiconductor substrate, a step of forming an embedding insulation layer of a resin material around each of the columnar portions, and a step of separating a wafer to form chips. In the step of forming the stacked semiconductor layer having the columnar portions, a separating semiconductor layer of a given pattern is formed in boundary regions of the chips; in the step of forming the embedding insulation layer, at least an upper surface of the separating semiconductor layer is exposed; and in the step of forming the chips, the separation is carried out using the separating semiconductor layer.
申请公布号 US2002142506(A1) 申请公布日期 2002.10.03
申请号 US20020095570 申请日期 2002.03.13
申请人 SEIKO EPSON CORPORATION 发明人 SATO ATSUSHI
分类号 H01L21/301;H01L33/06;H01L33/30;H01S5/02;H01S5/183;(IPC1-7):H01L21/00;H01L33/00 主分类号 H01L21/301
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