发明名称 Memory cell structural test
摘要 An apparatus and method for testing memory cells comprising coupling a first and a second memory cell to a first and a second bit lines, respectively, reading data from the first and second memory cells through the first and second bit lines, and comparing the voltage levels of the first and second bit lines.
申请公布号 US2002141259(A1) 申请公布日期 2002.10.03
申请号 US20010823642 申请日期 2001.03.30
申请人 MAK TAK M.;SPICA MICHAEL R.;TRIPP MICHAEL J. 发明人 MAK TAK M.;SPICA MICHAEL R.;TRIPP MICHAEL J.
分类号 G01R31/28;G11C11/401;G11C11/413;G11C29/02;G11C29/34;G11C29/50;(IPC1-7):G11C7/00 主分类号 G01R31/28
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