发明名称 Fundamental cell, semiconductor integrated circuit device, wiring method and wiring apparatus
摘要 The present invention provides a fundamental cell, semiconductor integrated circuit device, wiring method and wiring apparatus for designing a layout of a functional circuit block or a semiconductor integrated circuit device using the fundamental cells, with a higher degree of freedom of wirings. The connection terminals 2 and 3 of the fundamental cell 1 are terminals for supplying the power source voltage VDD and ground potential VSS to the N and P type wells. The terminals may be defined as a contact structure between a metal layer and N and P type well areas, and alternatively defined as stacked VIA structure for multilayered metal wiring layers and N and P type well areas if desired in correspondence with the manufacturing process used for manufacturing the semiconductor integrated circuit device implementing the fundamental cell 1. The fundamental cell 1 has neither the connection terminals 2 and 3, nor the power source voltage VDD and ground potential VSS to those two PMOS and NMOS transistors.
申请公布号 US2002140001(A1) 申请公布日期 2002.10.03
申请号 US20010939752 申请日期 2001.08.28
申请人 FUJITSU LIMITED 发明人 KOMAKI MASAKI
分类号 H01L21/822;H01L21/82;H01L27/04;H01L27/118;(IPC1-7):H01L27/10 主分类号 H01L21/822
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