发明名称 |
In-situ thickness measurement for use in semiconductor processing |
摘要 |
A system and method are disclosed for providing in-situ monitoring of thin film thickness, such as by employing a non-destructive optical measurement technique. The monitored film thickness may be employed to help achieve a desired feature film thickness and uniformity across a surface of a substrate. By monitoring film thickness during semiconductor processing, for example, one or more process control parameters may be adjusted to help achieve a desired film thickness and/or uniformity thereof.
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申请公布号 |
US2002142493(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US20010824112 |
申请日期 |
2001.04.02 |
申请人 |
HALLIYAL ARVIND;PHAN KHOI A.;SINGH BHANWAR |
发明人 |
HALLIYAL ARVIND;PHAN KHOI A.;SINGH BHANWAR |
分类号 |
C23C14/54;C23C16/52;G01B11/06;H01L21/00;H01L21/66;(IPC1-7):B05C11/00;H01L21/469;G01R31/26 |
主分类号 |
C23C14/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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