发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor wafer making a processing damage of a chamfered part of the semiconductor wafer uniform. SOLUTION: At the time of finishing chamfering, a chamfering is carried out such that a chamfering processing direction of the silicon wafer W is perpendicular to a chamfering processing direction at the time of primary chamfering. As a result, a polishing streak to a circumferential direction of the wafer generated on the chamfered surface at the time of the primary chamfering is removed by the finishing chamfering. During the finishing chamfering, the wafer W and a finishing chamfering grinding wheel 20 are not intruded into a groove of a grinding wheel as a conventional method. Accordingly, even if an impact force during chamfering is applied to the finishing chamfering grinding wheel 20, the chamfering grinding wheel 20 outwardly escapes within a predetermined permission range. As a result, an impact at the time of contact of a polishing applying surface of the chamfering grinding wheel 20 with the chamfering surface of the wafer W becomes small, a generation of polishing streak is inhibited and a damage of the chamfered part is made uniform.
申请公布号 JP2002283201(A) 申请公布日期 2002.10.03
申请号 JP20010093577 申请日期 2001.03.28
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 HARADA SEISHI
分类号 B24B9/00;H01L21/304;(IPC1-7):B24B9/00 主分类号 B24B9/00
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