发明名称 |
Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer |
摘要 |
The invention relates to a microelectronic device and a structure therein that includes a diffusion barrier layer having a first thickness and a first dielectric constant. An etch stop layer is disposed above and on the diffusion barrier layer. The etch stop layer has a second thickness and a second dielectric constant.
|
申请公布号 |
US2002140103(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US20010820079 |
申请日期 |
2001.03.28 |
申请人 |
KLOSTER GRANT;LEU JIHPERNG;WONG LAWRENCE;OTT ANDREW;MORROW PATRICK |
发明人 |
KLOSTER GRANT;LEU JIHPERNG;WONG LAWRENCE;OTT ANDREW;MORROW PATRICK |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|