| 摘要 |
A method of forming an ultra-shallow junction. An amorphous silicon layer first is formed in a surface of a substrate. Then, boron ions are implanted into the amorphous silicon layer, followed by implanting germanium ions into the amorphous silicon layer. A low temperature solid phase epitaxial re-growth (LTSPER) process is carried out to re-crystallize the amorphous silicon layer. Then, boron ions are implanted into the surface of the substrate before an activation so that an ultra-shallow junction is formed.
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