Method of crystallizing a silicon layer and method of fabricating a semiconductor device using the same

摘要

The present invention provides a method for increasing a crystallization rate of an amorphous silicon layer by implanting boron into the amorphous silicon layer during a process of crystallizing the silicon layer, which is used for an active layer of a thin film transistor, using MIC or MILC phenomenon. The method of crystallizing the silicon layer according to the present invention can be effectively utilized for fabricating P-type, N-type or CMOS thin film transistors.