发明名称 |
Nitride semiconductor laser device and optical information reproduction apparatus using the same |
摘要 |
A nitride semiconductor laser device includes a first-conductivity-type cladding layer formed of a nitride semiconductor material; an active layer formed of a nitride semiconductor material; and a second-conductivity-type cladding layer formed of a nitride semiconductor material. The first-conductivity-type cladding layer has a first main surface and a second main surface, the first main surfaces being closer to the active layer from the second main surface, and includes a first-conductivity-type first cladding layer and a first-conductivity-type second cladding layer having a different composition from that of the first-conductivity-type first cladding layer, which are provided in this order from the first main surface. The first-conductivity-type first cladding layer has a refractive index lower than that of the first-conductivity-type second cladding layer.
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申请公布号 |
US2002141469(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US20020076850 |
申请日期 |
2002.02.14 |
申请人 |
YAMASAKI YUKIO;ITO SHIGETOSHI |
发明人 |
YAMASAKI YUKIO;ITO SHIGETOSHI |
分类号 |
G11B7/125;H01S5/20;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
G11B7/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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