| 摘要 |
A polysilicon film, a titanium silicide film and a titanium nitride film are formed in a storage node contact hole of a memory cell region, while a polysilicon film, a titanium silicide film and a titanium nitride film are formed in a bit line contact hole. In a peripheral circuit region, a peripheral circuit contact hole is formed in a silicon oxide film, and another peripheral circuit contact hole is formed in an interlayer insulation film and a silicon oxide film. Thus obtained are a semiconductor device reducing a leakage current, suppressing an electrical short and attaining a high-speed operation while readily forming each contact hole and a method of fabricating the same.
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