Method for growing single crystal of compound semiconductor and substrate cut out therefrom

摘要

A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+theta, wherein the offset angle theta is 2°<=theta<=55°.