| 发明名称 |
SOI devices with integrated gettering structure |
| 摘要 |
An SOI wafer has a set of gettering sites formed in the device layer, optionally extending through the buried insulator; the gettering sites being formed within the source/drain regions of transistors.
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| 申请公布号 |
US2002140030(A1) |
申请公布日期 |
2002.10.03 |
| 申请号 |
US20010822431 |
申请日期 |
2001.03.30 |
| 申请人 |
MANDELMAN JACK A.;GAMBINO JEFFREY P.;LASKY JEROME B.;RADENS CARL J.;VOLDMAN STEVEN H. |
发明人 |
MANDELMAN JACK A.;GAMBINO JEFFREY P.;LASKY JEROME B.;RADENS CARL J.;VOLDMAN STEVEN H. |
| 分类号 |
H01L21/84;H01L27/12;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/84 |
| 代理机构 |
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