| 摘要 |
A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl1-x-yN film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film.
|
