| 摘要 |
A high frequency semiconductor device housing package comprises a dielectric substrate, an internal signal wiring conductor, an interlayer grounding conductor layer, a signal wiring conductor, a ball-shaped signal terminal mounting pad, and a grounding conductor layer. In the interlayer grounding conductor layer opposed to the signal wiring conductor is provided a conductive layer non-forming portion so as to be located in a region directly above the ball-shaped signal terminal mounting pad. An effective distance from the ball-shaped signal terminal mounting pad to the interlayer grounding conductor layer is made greater than an effective distance from the ball-shaped signal terminal mounting pad to the grounding conductor layer. With this configuration, the parasitic capacitance at the pad is reduced and a high frequency signal is efficiently transmitted.
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