发明名称 |
Modified nitride spacer for solving charge retention issue in floating gate memory cell |
摘要 |
A modified nitride spacer and making of the same are disclosed. The modified nitride spacer is formed adjacent a high-temperature oxide (HTO) layer which in turn is formed adjacent the sidewalls of a gate electrode. It is shown that the placement of an intervening oxide layer between the sidewalls of the gate electrode and the nitride spacer, in that order only, provides a significant improvement in charge retention in floating gate memory cells. Also, forming of the spacer from pure, undoped oxide only yields the same favorable results.
|
申请公布号 |
US2002142535(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US20020156625 |
申请日期 |
2002.05.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HO MING-CHOU;CHU WEN-TING;LIN CHANG SONG;CHANG CHUAN-LI;CHEN HSIN-MING;KUO DI-SON |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/51;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|