发明名称 Semiconductor device
摘要 It is an object to provide a semiconductor device comprising a short circuit protecting system capable of enhancing the detection precision of a collector current, thereby carrying out a reliable short circuit protection. An IGBT (1) having a collector (C) connected to a terminal (T1) and an emitter (E) connected to a terminal (T2) is provided, and has a sense emitter (SE) connected to a terminal (T2) through a variable resistor (VR1) to be a current and voltage converting section. A sense potential is output from an end on the sense emitter (SE) side of the variable resistor (VR1) and is given to a terminal (T11) of a current ratio detecting section (15). A gate of the IGBT (1) is connected to a terminal (T3) and an output of the current ratio detecting section (15) is connected to a terminal (T4).
申请公布号 US2002141126(A1) 申请公布日期 2002.10.03
申请号 US20010944584 申请日期 2001.09.04
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TABATA MITSUHARU
分类号 H02H3/08;H02H3/087;H02M1/00;H03K17/08;H03K17/082;H03K17/687;(IPC1-7):H02H3/18 主分类号 H02H3/08
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