| 摘要 |
A radiant light from a reaction chamber is measured outside the chamber, and a relation between a change of a radiation ratio of the radiant light, and a change of a thickness of a thin film is acquired, when a CVD apparatus is used to form the film on a substrate in the chamber. After acquiring the relation between the change of the radiation ratio and the change of the film thickness, the change of the radiation ratio is measured, when the CVD apparatus is used to form the film. The thickness of the film is estimated from the change of the radiation ratio measured in measuring the change of the radiation ratio from the relation between the change of the radiation ratio and the change of the film thickness acquired in acquiring the relation between the change of the radiation ratio and the change of the film thickness.
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