| 摘要 |
A method for fabricating row lines over a field emission array employs only two mask steps to define row lines and pixel openings. A layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material and a layer of passivation material is disposed over the layer of conductive material. Row lines and pixel openings may be formed through the passivation and conductive layers by use of a first mask. The row lines may be further defined by using a second mask to remove semiconductive material of the grid. Alternatively, a first mask may be used to fully define row lines from the layers of passivation, conductive, and semiconductive material, while a second mask may be used to define pixel openings through the layers of passivation and conductive material. Field emission arrays fabricated by such methods are also disclosed.
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