| 摘要 |
A method of manufacturing a ferroelectric memory device includes a step of forming a first region (24) having surface characteristics allowing the material for the members of a ferroelectric capacitor section to be preferentially deposited, and a second region (26) having surface characteristics allowing the material for the capacitor section to be less deposited than the first region (24), and a step of providing the material on the base (10) to form a first electrode (32), a ferroelectric film (34), and a second electrode (36) in the first region (24) of the base (10).
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