| 摘要 |
High-quality epitaxial layers of narrow-bandgap monocrystalline semiconductor materials can be grown overlying monocrystalline substrates (22), such as large silicon wafers, by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing a monocrystalline oxide layer (24) on a silicon wafer. The oxide layer may be spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high-quality monocrystalline oxide layer. The oxide layer (24) is lattice-matched to both the underlying silicon wafer and the overlying monocrystalline semiconductor material layer (26). Any lattice mismatch between the oxide layer (24) and the underlying silicon substrate (22) is relieved by the amorphous interface layer (28). Optical structures, such as far-infrared detectors and emitters, can be grown on high-quality, epitaxial, narrow-bandgap compound semiconductor materials to create highly reliable devices at reduced costs.
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