发明名称 Method for producing crystalline silicon
摘要 A simple and inexpensive method and apparatus for producing crystalline silicon comprising the steps of melting silicon in a mold, then cooling the bottom of the mold is cooled to create a positive temperature gradient from the bottom of the mold upward, thereby causing the molten silicon to crystallize from the inner bottom of the mold upward so that the solid-liquid phase boundary, separating the crystallized silicon from the molten silicon, moves upward as the molten silicon crystallizes. As the silicon crystallizes, an inert gas is blown onto the surface of the molten silicon from a position above the surface of the molten silicon, thereby vibrating the surface of the molten silicon in such a manner that cavities are formed in the surface of the molten silicon.
申请公布号 US2002139297(A1) 申请公布日期 2002.10.03
申请号 US20020103797 申请日期 2002.03.25
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 WAKITA SABURO;NAKADA YOSHINOBU;SASAKI JUNICHI;ISHIWARI YUJI
分类号 C01B33/02;C30B11/00;(IPC1-7):C30B1/00;C30B35/00 主分类号 C01B33/02
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