发明名称 |
METHOD FOR PRODUCING HYDROGENATED SILICON OXYCARBIDE FILMS |
摘要 |
A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices. |
申请公布号 |
WO02077320(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
WO2002US08689 |
申请日期 |
2002.03.20 |
申请人 |
DOW CORNING CORPORATION;LOBODA, MARK;HWANG, BYUNG |
发明人 |
LOBODA, MARK;HWANG, BYUNG |
分类号 |
C23C16/42;C23C16/30;C23C16/32;H01L21/312;H01L21/314;H01L21/316 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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