发明名称 SEMICONDUCTOR STRUCTURES HAVING MULTIPLE CONDUCTIVE LAYERS IN AN OPENING, AND METHODS FOR FABRICATING SAME
摘要 <p>In some embodiments, a circuit structure comprises a semiconductor substrate (110), an opening (130) passing through the substrate between a first side of the substrate and a second side (110B) of the substrate, and a plurality of conductive layers (210, 320) in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad (320C) made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods are also provided.</p>
申请公布号 WO02078087(A2) 申请公布日期 2002.10.03
申请号 WO2002US05371 申请日期 2002.02.20
申请人 TRU-SI TECHNOLOGIES, INC. 发明人 HALAHAN, PATRICK, B.;SINIAGUINE, OLEG
分类号 H01L29/872;H01L21/3205;H01L21/329;H01L21/768;H01L21/822;H01L23/48;H01L23/52;H01L23/552;H01L27/04;H01L29/47;H01L29/861;(IPC1-7):H01L23/48 主分类号 H01L29/872
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