发明名称 |
SEMICONDUCTOR STRUCTURES HAVING MULTIPLE CONDUCTIVE LAYERS IN AN OPENING, AND METHODS FOR FABRICATING SAME |
摘要 |
<p>In some embodiments, a circuit structure comprises a semiconductor substrate (110), an opening (130) passing through the substrate between a first side of the substrate and a second side (110B) of the substrate, and a plurality of conductive layers (210, 320) in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad (320C) made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods are also provided.</p> |
申请公布号 |
WO02078087(A2) |
申请公布日期 |
2002.10.03 |
申请号 |
WO2002US05371 |
申请日期 |
2002.02.20 |
申请人 |
TRU-SI TECHNOLOGIES, INC. |
发明人 |
HALAHAN, PATRICK, B.;SINIAGUINE, OLEG |
分类号 |
H01L29/872;H01L21/3205;H01L21/329;H01L21/768;H01L21/822;H01L23/48;H01L23/52;H01L23/552;H01L27/04;H01L29/47;H01L29/861;(IPC1-7):H01L23/48 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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