| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition system, capable of obtaining a desired film thickness distribution in a short time. SOLUTION: In the film deposition system, atoms of a target are sputtered by heating the target or performing ion beam irradiation to the target in a sufficiently evacuated vessel, a substrate to be film-deposited of rotational- symmetric shape is rotated around the axis having rotational symmetry shape, a film thickness correction plate is disposed in the vicinity of the substrate, and the atoms are deposited on the substrate, and the shape of the film thickness correction plate is variable.
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